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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3821 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Switching Speed *High Reliability APPLICATIONS *Switching regulators *DC-DC converter *Solid state relay *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage VALUE 450 UNIT V Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range w w scs .i w 400 400 7 V V V 5 1.5 40 150 -55~150 A A W .cn mi e PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 1A; IB= 0 B 2SC3821 MIN 400 400 450 7 TYP. MAX UNIT V V V V IC= 1mA; IE= 0 IE= 0.1mA ; IC= 0 IC= 2A; IB= 0.4A B 1.2 V V mA mA IC= 2A; IB= 0.4A B Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w w. sem isc VCB= 450V ; IE=0 VEB= 7V; IC=0 IC= 2A; VCE= 5V IC= 4A , IB1= -IB2= 0.8A; RL= 20;PW=20s Duty Cycle2% .cn i 10 1.5 1.0 0.1 1.0 2.5 1.0 s s s isc Websitewww.iscsemi.cn 2 |
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